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Research Interests: Instrumentation, method development, and application of nonlinear optical microscopy techniques
Eighth Annual Chautauqua on Nonlinear Optics
June 24 – 28, 2013

Held at the Purdue University Campus,
West Lafayette, IN 47907

This week-long intensive, interactive annual summer short course program on nonlinear optical and multi-photon phenomena is designed to engage participants in nuts-and-bolts discussions on issues related to measurements and analysis. This year’s focus subject will target fundamentals of nonlinear optical microscopy, including issues related to polarization, molecular and laboratory reference frame, and optical phase. The program is designed to target participants with approximately 1-2 years of hands-on experience in nonlinear optics.

Keynote Speaker’s Abstract:
Sum-frequency generation vibrational spectroscopy (SFG-VS) is a quantitative spectroscopic tool with many applications in understanding the structure and interactions of complex molecular surfaces and interfaces. Application of SFG-VS requires quantitative measurement and interpretation of the SFG data. I will try to discuss the basic theory and methodology, as well as instrumentation development and some examples of their applications, in three topical lectures on the followings: (1) Spectral resolution, lineshape, structural phase and coherent vibrational dynamics in SFG-VS; (2) Polarization and symmetry on spectral assignment and orientation analysis in SFG-VS; (3) Examples of quantitative SFG-VS in fundamental and applied problems. The aim of these talks is to help the audiences to get familiar with the literature, concepts and tools in SFG-VS, which is no longer in the hand-waving stage, for applications to solve complex problems in interface studies.

Talk 1: Spectral resolution, lineshape, structural phase and coherent vibrational dynamics in SFG-VS
Talk 2: Polarization and symmetry on spectral assignment and orientation analysis in SFG-VS
Talk 3: Examples of quantitative SFG-VS in fundamental and applied problems

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Large Diameter Zinc Selenide (ZnSe) Single Crystals for Radiation Detectors

Tellurium-doped single-crystal ZnSe, or ZnSe(Te), is an important material for fabricating the radiation detectors needed for nuclear physics research. To date, there is no efficient crystal growth technique for producing high-quality, large-diameter, ZnSe single crystals. This project will investigate a novel high-temperature, physical-vapor-transport (HT-PVT) technique to grow large diameter, high quality ZnSe single crystals. These ZnSe single crystals can be used as substrates for fabricating high performance radiation detectors. Phase I will focus on exploring HT-PVT growth conditions for ZnSe single crystals, so that a growth rate of at least 0.5mm/hr can be achieved. Purity analysis, defect characterization, and electrical characterization will be performed on HT-PVT grown ZnSe single crystals. An HT-PVT growth process for ZnSe crystal boules (of 1 inch in diameter and 10 mm in length) will be established. Commercial Applications And Other Benefits as described by the Applicant: ZnSe single crystal would be an efficient scintillator material for x-ray radiation detectors and imaging devices. These radiation detectors have important applications in high energy and nuclear physics, as well as in commercial areas such as security screening, medical x-ray imaging, dental imaging, and industrial x-ray imaging. In addition, the material could be used in ZnSe-based II-VI compound semiconductor devices, such as blue and white LEDs, and blue lasers.

Zinc Chalcogenides (ZnS, ZnSe ,ZnTe) are the wide band gap II-VI compounds. II-VI
compounds possess high iconicity (0.77, 0.63, 0.49 respectively for ZnS, ZnSe ZnTe) of chemical bond, therefore they have smaller energy of formation of vacancies and these accounts for the large II-VI nonstoichiometry, and also they are very sensitive to any strain. Thus high ionic character of these compounds makes it difficult to control the growing interface both from melt and vapor phase. Because of the wide band gap, II-VI compounds are the promising material for their use in many optoelectronic applications. ZnSe, one of the candidate of II-VI compounds group, possess the wide direct band gap of 2.7eV at room temperature also has many potential applications in optical devices and components. Bulk ZnSe is very important material to be used as a substrate for operating in blue range. Optical devices based on ZnSe having a ZnSe substrate
(homojunctions) have many advantages over the optical devices having GaAs substrate
(hetrojunction).

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